Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-10-03
2006-10-03
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S797000
Reexamination Certificate
active
07115994
ABSTRACT:
A semiconductor substrate includes a wafer including an element area and a non-element area delineating the element area, a first layered structure situated in the element area, a first insulating film covering the first layered structure, and exhibiting a first etching rate with respect to an etching recipe, a second insulating film covering the first layered structure covered by the first insulating film in the element area, and exhibiting a second etching rate with respect to the etching recipe, the second etching rate being greater than the first etching rate, and a second layered structure situated in the non-element area, wherein the second layered structure includes at least a portion of the first layered structure.
REFERENCES:
patent: 5002902 (1991-03-01), Watanabe
patent: 5663092 (1997-09-01), Lee
patent: 5733801 (1998-03-01), Gojohbori
patent: 6011286 (2000-01-01), Wu
patent: 2004/0129967 (2004-07-01), Kim et al.
patent: 2005/0116318 (2005-06-01), Park
patent: 63-107037 (1988-05-01), None
patent: 4-368147 (1992-12-01), None
patent: 2002-93868 (2002-03-01), None
patent: 2003-23138 (2003-01-01), None
Clark S. V.
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Semiconductor substrate and method of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor substrate and method of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor substrate and method of fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3700467