Patent
1979-11-19
1981-08-04
James, Andrew J.
357 23, 357 49, 357 80, 29580, H01L 2934, H01L 2978, H01L 2712
Patent
active
042825431
ABSTRACT:
An improved semiconductor substrate comprises at least one insulating layer comprising (a) a thin film of amorphous silicon dioxide formed on a base plate comprising single crystal silicon and (b) a thin film of single crystal sapphire superimposed on the silicon dioxide film. A semiconductor substrate may be prepared by forming a first thin film of single crystal sapphire on a base plate comprising single crystal silicon, converting, if desired, the upper surface layer of the silicon base plate into a first thin film of amorphous silicon dioxide by thermal oxidation through the sapphire film, forming a second thin film comprising single crystal silicon on the first sapphire film, forming a second thin film comprising single crystal sapphire on the second silicon film, and then thermally oxidizing the second silicon film through the second sapphire film to form a second film comprising amorphous silicon dioxide.
REFERENCES:
patent: 3393088 (1968-07-01), Manasevit
patent: 3602981 (1971-09-01), Kool
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patent: 3922705 (1975-11-01), Yerman
patent: 3997381 (1976-12-01), Wanlass
patent: 4050979 (1977-09-01), Smeltzer et al.
Ihara Masaru
Jifuku Masayuki
Fujitsu Limited
James Andrew J.
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