Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-03-04
1995-03-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 16, 257 17, 257 18, 257 20, 372 45, H01L 29161
Patent
active
053960823
ABSTRACT:
The semiconductor device has a semiconductor substrate composed essentially of a III-V compound semiconductor containing Ga and As, and a surface layer structure provided on the semiconductor substrate and this layer has a composition different from that of the semiconductor substrate. The surface layer structure includes a strained layer epitaxially grown on the surface of the semiconductor substrate and composed essentially of at least one-element selected from the group consisting of indium, gallium, aluminum and boron, and at least one element selected from the group consisting of arsenic and phosphorus. The strained layer has a composition different from that of the semiconductor substrate The strained layer has a valence band maximum lower in energy than that of the valence band maximum of the semiconductor substrate.
REFERENCES:
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Ohno Takahisa
Wada Kazumi
Wada Yoshinori
Mintel William
Nippon Telegraph & Telephone Corporation
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