Semiconductor substrate

Details Semiconductor substrate Semiconductor substrate

1985-04-16

1986-03-18

Powell, William A.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including variation in thickness

29576B, 29576W, 29580, 156603, 156649, 156653, 156657, 156662, 357 49, 357 56, 427 86, 428192, 428446, 428620, H01L 2712, H01L 2906, H01L 21305, H01L 21306

Patent

active

045768510

ABSTRACT:
A semiconductor substrate including a single-crystal mono-crystalline film on an insulating film and methods of fabrication are provided. The insulating film has an opening to expose the single-crystal material to a polycrystalline or amorphous semiconductor layer on the insulating film for growing mono-crystals upon application of heat slightly less than the melting point of the semiconductor and applying an energy beam, such as an electron beam or light beam to the semiconductor film. The semiconductor-insulator-semiconductor provides improved substitutes for Silicon On Sapphire formed by the epitaxial method.

REFERENCES:
patent: 3375418 (1968-03-01), Garnache et al.
patent: 3649386 (1972-03-01), Murphy
patent: 3740280 (1973-06-01), Ronen
patent: 3743552 (1973-07-01), Fa
patent: 3789276 (1974-01-01), Sivertsen
patent: 3929529 (1975-12-01), Poponiak
patent: 4252581 (1981-02-01), Anantha et al.
patent: 4378627 (1983-04-01), Jambotkar
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4487639 (1984-12-01), Lam et al.

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