Semiconductor substate with improved thermal conductivity

Details Semiconductor substate with improved thermal conductivity Semiconductor substate with improved thermal conductivity

1995-11-14

1998-10-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257765, 257675, 257741, 257747, 257712, H01L 2336, H01L 2314, H01L 23373, H01L 2328

Patent

active

058281274

ABSTRACT:
A material for a semiconductor substrate comprising an aluminum-silicon alloy containing from 50% to 80% by weight of silicon and having a thermal conductivity of 0.28 cal/cm.sec..degree. C. or higher, a coefficient of thermal expansion of 12.times.10.sup.-6 /.degree. C. or smaller and a density of 2.5 g/cm.sup.3 or lower. This material is produced by molding an Al--Si alloy powder, which has been obtained through rapid solidification by atomization, to form a compact and then consolidating the compact by means of forging, sintering, etc. The substrate material may have an Al or Al alloy covering layer at least one surface thereof and, further, as necessary, an insulating or plating layer on the covering layer. The thus obtained substrate material is lightweight and has a suitable coefficient of thermal expansion for a substrate as well as a high thermal conductivity. Therefore, a semiconductor device with high performance and reliability can be obtained using such substrate material.

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patent: 5055914 (1991-10-01), Shimizu et al.
patent: 5345108 (1994-09-01), Kikkawa
patent: 5386339 (1995-01-01), Polinski, Sr.
patent: 5402004 (1995-03-01), Ozmat et al.
patent: 5489802 (1996-02-01), Sakamoto et al.
Patent Abstracts of Japan, JP63134694, Sumitomo Electric Jun. 7, 1988 (1 pg.).
Patent Abstracts of Japan, JP6188334, Kyocera, Jul. 8, 1994 (1pg) M. Hiroshi.

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