Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-02-07
2010-06-08
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S506000, C257S544000, C257SE27130
Reexamination Certificate
active
07732885
ABSTRACT:
A semiconductor structure with dual isolation structures is disclosed. The semiconductor structure may include a protruding isolation structure in a pixel array region of a substrate and an embedded isolation structure in a peripheral device region of the same substrate. A region of the protruding isolation structure extends from an upper surface of the substrate, while another region of the protruding isolation structure may, optionally, be embedded within the substrate. The embedded isolation structure is formed within the substrate and includes an upper surface that is substantially coplanar with the upper surface of the substrate. A method of forming the semiconductor structure with dual isolation structure is also disclosed.
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Akram Salman
Chapman James M.
Aptina Imaging Corporation
Novacek Christy L
Smith Zandra
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