Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2007-05-01
2007-05-01
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S384000, C257S536000, C257S537000, C257S542000
Reexamination Certificate
active
11023665
ABSTRACT:
Semiconductor structures and methods for fabricating semiconductor structures are provided. The method comprises forming a first insulating layer having a substantially planar surface overlying a first conductive layer of an interconnect stack. A thin film resistor is formed overlying the first insulating layer and a second insulating layer is deposited overlying the first insulating layer and the resistor. A portion of the second insulating layer is removed to form a substantially planar surface. The second insulating layer is anisotropically etched to form a first via to the first conductive layer and a fill material comprising tungsten is deposited within the first via. The second insulating layer is wet etched to form a second via to the thin film resistor and a second conductive layer is deposited overlying the second insulating layer and within the second via.
REFERENCES:
patent: 6524925 (2003-02-01), Lee
patent: 6645821 (2003-11-01), Bailey et al.
patent: 6734076 (2004-05-01), Jaiswal et al.
patent: 6737326 (2004-05-01), Steinmann et al.
patent: 2004/0087098 (2004-05-01), Ng et al.
Danzl, R. et al., “Rapid Low-Cost Development of a Planarized 3-Level Interconnect Module,”Proceeding 9thInternational CMP-MIC, Los Angeles, CA (Feb. 2004).
Barry Carol F.
Lee Hsien-Ming
Medtronic Inc.
Wolde-Michael Girma
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