Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2008-08-13
2011-11-22
Tran, Long (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S209000, C257S415000, C257S798000
Reexamination Certificate
active
08063454
ABSTRACT:
Semiconductor structures including a movable switching element having a base disposed on a conductive pad, a body extending from the base, and an end laterally adjacent and spaced apart from a conductive contact are disclosed. Upon application of a threshold voltage, the movable switching element may deform toward the conductive contact via an electrical field, establishing electrical contact between the conductive pad and the conductive contact. Various methods may be used to form such semiconductor structures, and switching devices including such semiconductor structures. Memory devices and electronic systems include such switching devices.
REFERENCES:
patent: 6835613 (2004-12-01), Schlaf
patent: 7330369 (2008-02-01), Tran
patent: 7336523 (2008-02-01), Kang
patent: 7558103 (2009-07-01), Nakamura et al.
patent: 2003/0122640 (2003-07-01), Deligianni et al.
patent: 2003/0178617 (2003-09-01), Appenzeller et al.
patent: 2004/0028812 (2004-02-01), Wessels et al.
patent: 2004/0188721 (2004-09-01), Lieber et al.
patent: 2005/0112791 (2005-05-01), Davis et al.
patent: 2005/0180193 (2005-08-01), Kang
patent: 2005/0215049 (2005-09-01), Horibe et al.
patent: 2005/0270442 (2005-12-01), Yang et al.
patent: 2006/0086314 (2006-04-01), Zhang et al.
patent: 2006/0260674 (2006-11-01), Tran
patent: 2006/0273871 (2006-12-01), Busta et al.
patent: 2006/0278902 (2006-12-01), Sun et al.
patent: 2007/0211525 (2007-09-01), Nakamura et al.
patent: 2009/0174014 (2009-07-01), Kunze et al.
patent: 2006137926 (2006-12-01), None
patent: 2007/131796 (2007-11-01), None
patent: 2007146769 (2007-12-01), None
Younan Xia et al., “One-Dimensional Nanostructures: Synthesis, Characterization, and Applications,” Advanced Materials, Mar. 4, 2003, pp. 353-389, vol. 15, No. 5.
Dequesnes et al., Simulation of Carbon Nanotube-Based Nanoelectromechanical Switches, Beckman Institute for Advanced Science and Technology, U of I, Urbana IL, 4 pages.
Dujardin et al., Self-Assembled Switches Based on Electroactuated Multiwalled Nanotubes, Applied Physics Letters, vol. 87, pp. 193107-1-193107-3, 2005.
Jang et al., Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes, Applied Physics Letters, vol. 87, pp. 163114-1-163114-3, 2005.
Kaul et al., Electromechanical Carbon Nanotube Switches for High-Frequency Applications, Nano Letters, vol. 6, No. 5, pp. 942-947, 2005.
Liliental-Weber et al., InN Nanrods Grown on Different Planes of AI2O3, Microsc Microanal, vol. 13, 2007, 2 pages.
Merkulov et al., Patterned Growth of Individual and Multiple Vertically Aligned Carbon Nanofibers, Applied Physics Letters, vol. 76, No. 24, pp. 3555-3557, 2000.
Schonenberger, physicsworld.com/cws/article/print/606—43k, Multiwall Carbon Nanotubes, Physicsworld.com, Jun. 2, 2000.
Rosenblatt et al., High Performance Electrolyte Gated Carbon Nanotube Transistors, Nano Letters, vol. 2, No. 8, pp. 869-872, 2002.
Rueckes et al., Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing, Science, vol. 289, No. 94, pp. 94-97, 2000.
Tans et al., Room-Temperature Transistor Based on a Single Carbon Nanotube, Letters to Nature, vol. 393, pp. 49-52, 1998.
Zheng et al., Efficient CVD Growth of Single-Walled Carbon Nanotubes on Surfaces Using Carbon Monoxide Precursor, Nano Letters, vol. 2, No. 8, pp. 895-898, 2002.
Mouli Chandra V.
Sandhu Gurtej S.
Micro)n Technology, Inc.
Tran Long
TraskBritt
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