Semiconductor structures having through-holes sealed with...

Details Semiconductor structures having through-holes sealed with... Semiconductor structures having through-holes sealed with...

2002-10-18

2008-03-04

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S056000, C438S542000, C257SE31087

Reexamination Certificate

active

07338829

ABSTRACT:
The invention relates to a method for producing a detector for determining the energy of photons and charged particles; to be precise, a so-called ΔE detector or transmission detector. The invention also relates to a detector that can be produced by using said method. The aim of the invention is to provide a method for producing a detector of the aforementioned type that is stable over a long period of time and in which dead zones are distinctly minimized. The invention also aims to provide a detector of this type. To these ends, the inventive method is used to produce a Si(Li) substrate having a p+layer and an n layer. These can be layers produced according to the prior art. According to the inventive method, the n layer is partially removed, for example, by chemical etching, honing or by lapping. Lapping, in particular, has proven to be effective. This reduces the zone that is ineffective in a detector of the aforementioned type. The detector is produced from the substrate treated in this manner. The dead zones in the detector are significantly minimized compared to those in a detector produced using prior art methods.

REFERENCES:
patent: 3225198 (1965-12-01), Mayer
patent: 3413528 (1968-11-01), Llacer
patent: 3413529 (1968-11-01), Goulding
patent: 6486476 (2002-11-01), Ochiai et al.
patent: 2004/0178461 (2004-09-01), Protic et al.
patent: 2005/0001213 (2005-01-01), Tindall et al.
“Thin Window Si(Li) Detectors for the ISEE-C Telescope”; J.T.Walton et al; IEEE transactions on Nuclear Science, vol. NS-25, No. 1, Feb. 1978; p. 391-394.
“Development of Lithiumodrifted Silicon Detectors . . . ” Takashi Miyachi et al; Jpn.J.Appl.Phys.vol. 33(1994) pp. 4115-4120.
“Large Diameter Ithium Compensated Silicon Detectors for the NASA . . . ”; G.L.Allbritton et al; IEEE transaction of Nuclear Science, vol. 43, No. 3 Jun. 1996; p. 1505-1509.
“X-Ray Detectors With Amorphous Silicon Passivation”; J.T.Walton et al; IEEE transaction on Nuclear Science, vol. NS-31, No. 1,Feb. 1984; p. 331-335.
“Rediation Detection and Measurement”; Chapter 13,Lithium-Drifted Silicon Detecctors; p. 458-459.G.F.Knoll.
“Long-Term Instability of Lithium-Drifted Silicon Detector” Takashi Miyachi et al; Jpn.J.Appl.Phys.vol. 34 (1995) p. 3065-3070.
“Stability of a Lithium-Drifted Silicon Detector”;Takashi Miyachi et al; Jpn J.Appl.Phys.vol. 33 (1994) p. 4111-4114.

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