Semiconductor structures and method of manufacturing

Details Semiconductor structures and method of manufacturing Semiconductor structures and method of manufacturing

1996-01-31

1997-07-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257762, 257763, 257768, H01L 2348, H01L 2352, H01L 2940

Patent

active

056464509

ABSTRACT:
A semiconductor structure is described having a first electrode and a second electrode disposed on a surface of the structure and a bridging conductor connected between the first electrode and the second electrode. The bridging conductor includes a plurality of layers of different metals wherein the plurality of layers of different metals includes a layer of refractory metal adjacent a layer of electrically conductive metal. In a preferred embodiment, the refractory metal is titanium and the electrically conductive metal is gold. With such an arrangement, a semiconductor structure is provided which is effective in preventing restructuring due to mechanical stresses induced in the metal by dissimilar thermal expansion coefficients when electrical pulsing cycles the temperature of the semiconductor structure.

REFERENCES:
patent: 4404735 (1983-09-01), Sakurai
patent: 4456888 (1984-06-01), Ayasli
patent: 4959705 (1990-09-01), Lemnios et al.
patent: 5148260 (1992-09-01), Inoue et al.
patent: 5306936 (1994-04-01), Goto

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