Metal treatment – Stock – Ferrous
Patent
1976-05-11
1977-09-27
James, Andrew J.
Metal treatment
Stock
Ferrous
357 55, 357 56, 357 58, 357 68, 357 71, 148175, 156647, H01L 2904, H01L 2906, H01L 2912, H01L 2348
Patent
active
040515079
ABSTRACT:
A method of making a number of semiconductor diodes on a single wafer without breakage during handling and processing, comprising the steps of forming a plurality of mesas on one surface of an intrinsic substrate, diffusing a selected first conductivity-type region into each mesa, coating the front surface of the substrate and mesas wiyth oxide, chemically milling recesses into the opposite side of the substrate in alignment with the mesas to a predetermined depth where the mesas are each supported by a thin annular area of substrate material permitting transfer of the device into an epitaxial reactor, gas etching the recesses to a depth beyond the oxide interface to physically separate the mesas from the substrate material, growing a thin epitaxial layer of opposite conductivity type over the back surface of the device, applying ohmic contacts to the device, and separating the individual mesas.
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Bartlett Milton D.
James Andrew J.
Pannone Joseph D.
Raytheon Company
Sharkansky Richard M.
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