Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1991-02-05
1994-04-26
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257506, 257517, H01L 2980, H01L 2972, H01L 2712
Patent
active
053069447
ABSTRACT:
The thickness of a DI island structure is reduced and the performance of bipolar and JFET structures enhanced by shaping the bottom of the DI island during anisotropic etching to define isolated islands, so that the resulting structure contains one or more projections whose separation from the topside diffusion predefines operational characteristics of the device. If the projection is directly beneath the bottom of a gate diffusion, pinch-off voltage of a JFET device is reduced without substantially affecting channel resistance. When the projection is positioned so that its inclined surface extends alongside the curvilinear PN junction formed between the gate diffusion and the island, channel thickness and sensitivity of channel thickness to viriations in island thickness are reduced. To enhance BVCEO in DI structures, the inverted V-shaped projection extends alongside, but is spaced-apart from, a deep base diffusion, so that the base-collector PN junction is spaced-apart from the projection, such that that portion of the island layer between the base-collector PN junction and the projection becomes completely depleted of carriers prior to the magnitude of the electric field required for collector-emitter breakdown being reached in the course of an increase in collector-to-emitter voltage. The resistance of an island resistance device can be increased by forming one or more projections across the bottom of the island layer, which effectively increases the resistance at those portions of the island layer between the vertex of each projection and the top surface of the island layer.
REFERENCES:
patent: 3378737 (1965-06-01), Welty
patent: 4602419 (1986-07-01), Harrison et al.
Ziegler et al, `Self Isolating Bathtub Collector . . . `, IBM Tech, vol. 14 #5, Oct. 1971, pp. 1635-1636.
Muller et al, Device Electronics for IC's, pp. 202-213, 1986.
Harris Corporation
James Andrew J.
Meier Stephen D.
Wands Charles E.
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