Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-04-10
2007-04-10
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S434000, C257S751000
Reexamination Certificate
active
10739755
ABSTRACT:
A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
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Ermer James H.
King Richard
Kukulka Jerry R.
Lau Maggy L.
Yoon Hojun
Ingrassia Fisher & Lorenz P.C.
Owens Douglas W.
The Boeing Company
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