Semiconductor structure with flared mesa burying layers

Details Semiconductor structure with flared mesa burying layers Semiconductor structure with flared mesa burying layers

1989-02-22

1990-06-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 56, H01S 319

Patent

active

049359363

ABSTRACT:
A semiconductor structure and methods for making it, for use in opto-electronic devices, employs only MOVPE growth steps. The structure is based on a mesa having substantially non-reentrant sides. To make it, an initial semiconductor structure is produced which comprises a substrate with a mesa thereon, the mesa having a self-aligned, central stripe of metal organic vapour phase growth suppressing material on its uppermost surface. Burying layers are then grown by MOVPE at either side of the mesa, the stripe removed, and covering layers grown over the mesa and adjoining regions of the burying layers. To make an opto-electronic device, a silica window can be formed on the uppermost surface of the covering layers and contacts provided through the window and to the remote face of the substrate. Two methods of making the initial semiconductor structure are described. Devices such as optical detectors and waveguides can be made using methods according to the invention. Particularly importantly, semiconductor lasers which will operate in a single transverse mode can be made.

REFERENCES:
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patent: 4468850 (1984-08-01), Liau et al.
patent: 4566171 (1986-01-01), Nelson et al.
patent: 4597085 (1986-06-01), Mito et al.
Electronic Letters 20 (1984) Oct. No. 21, "CW Operation of GaInAsP Buried Ridge Structure Laser at 1.5 .mu.m Grown by LP-MOCVD"--pp. 850-851.
IEEE Electron Device Letters--EDL-5 (1984) Aug. No. 8, NY, USA; GaAs/GaAlAs Selective MOVCD Epitaxy and Planar Ino-Implanation Technique for Complex Integrated Opto-electronic Circuit Applications:--pp. 306-309.
IEEE Journal of Quantum Electronics, vol. QE15, No. 8, Aug. 1979; "Growth and Characterization of MO/VPE Double-Heterojunction Laser"--pp. 762-765.
Electronics Letters 11th Oct. 1984, vol. 20, No. 21--"Low Threshold and Low Dispersion MOCVD/LPE Buried-Heterostructure GaAs/GaAlAs Lasers", pp. 857-859.
Electronics Letters 15 Sep. 1983, vol. 19, No. 19 "GaAlAs Buried-Hetero-Structure Lasers Grown by a Two-Step MOCVD Process", pp. 759-760.
Electronics Letters 21st Jan. 1982, vol. 18, No. 2; "MBE Growth InGaAs/InP Bh Lasers with LPE Burying Layers"--pp. 91-92.
Appl. Phys. Lett. 46, 15 Jan. 1985, by Razeghi et al., entitled "Very Low Threshold Buried Ridge Structure Lasers Emitting at 1.3 .mu.m Grown by Low Pressure Metalorganic Chemical Vapor Deposition", pp. 131-133.

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