Patent
1989-08-22
1991-06-18
Munson, Gene M.
357 2313, 357 59, H01L 2702, H01L 2978, H01L 2904
Patent
active
050252984
ABSTRACT:
MOSFET devices or circuits incorporating an improved substrate temperature sensing element are obtained by forming a PN junction directly on a thin (gate) dielectric region. The temperature sense junction is desirably formed in a poly layer. By mounting it directly on thin (gate) dielectric its thermal response to temperature changes in the substrate is improved while still being electrically isolated from the substrate. It is desirable to provide over-voltage protection elements coupled to the junction to avoid rupture of the underlying thin dielectric. Because the sense diode and all the over-voltage protection devices may be made of poly with junctions perpendicular to the substrate, the structure is particularly compact and simple to fabricate.
REFERENCES:
patent: 4184085 (1980-01-01), Takahashi
patent: 4760434 (1988-07-01), Tsuzuki et al.
Margolin, "Discrete Power Semiconductors", Power Technics Magazine (5/87), pp. 14-16, 18-20.
Yoshida et al., "Novel Gate-Protection Devices for MOSFET's", Proc. 14th Conference Solid State Devices, Tokyo, 1982; Jap. Journal Applied Physics, vol. 22 (1983), Suppl. 22-1, pp. 81-84.
Tsuzuki et al, "Self-Thermal Protecting Power MOSFET's", Proc. Power Electronics Specialist's Conference, Jun., 1987, pp. 31-37.
Fay Gary V.
Robb Stephen P.
Sutor Judith L.
Terry Lewis E.
Barbee Joe E.
Handy Robert M.
Motorola Inc.
Munson Gene M.
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