Semiconductor structure with annular collector/subcollector regi

Details Semiconductor structure with annular collector/subcollector regi Semiconductor structure with annular collector/subcollector regi

1975-12-31

1978-03-14

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 15, 357 20, 357 36, 307299A, 307317A, H01L 2704

Patent

active

040794083

ABSTRACT:
Disclosed is a semiconductor structure with an annular collector/subcollector region. The base area with the emitter, is positioned over the collector/subcollector region only, resulting in a smaller base to collector capacitance. Packing density is improved and circuit design flexibility is provided by the ability to change the emitter size without changing the size of the overall structure.

REFERENCES:
patent: 3229119 (1966-01-01), Bohn et al.
patent: 3482111 (1969-12-01), Gunderson et al.
patent: 3510736 (1970-05-01), Dingwall
patent: 3622842 (1971-11-01), Oberal
patent: 3648125 (1972-03-01), Peltzer
patent: 3774088 (1973-11-01), Magdo et al.
patent: 3909837 (1975-09-01), Kronlage
patent: 3916431 (1975-10-01), Khajezadeh
Hibberd, R. G., Integrated Circuits, McGraw-Hill, N.Y., 1969, pp. 109-110.

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