Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2006-07-04
2006-07-04
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S287000
Reexamination Certificate
active
07071503
ABSTRACT:
A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
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Dohnke Karl
Elpelt Rudolf
Friedrichs Peter
Mitlehner Heinz
Schörner Reinhold
Greenberg Laurence A.
Locher Ralph E.
Prenty Mark V.
SiCED Electronics Development GmbH & Co. KG
Stemer Werner H.
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