Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2011-04-12
2011-04-12
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C219S121760
Reexamination Certificate
active
07923306
ABSTRACT:
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
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Office action in U.S. Appl
Baird Brian W.
Bruland Kelly J.
Evans Frank G.
Lo Ho Wai
Swaringen Stephen N.
Electro Scientific Industries Inc.
Pert Evan
Stoel Rives LLP
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