Semiconductor structure of liquid crystal display and...

Details Semiconductor structure of liquid crystal display and... Semiconductor structure of liquid crystal display and...

2008-01-21

2009-10-13

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S149000, C257SE21094, C257SE21104, C257SE21121

Reexamination Certificate

active

07601552

ABSTRACT:
A semiconductor structure of a liquid crystal display and the manufacturing method thereof are described. The manufacturing method includes the following steps. A patterned polysilicon layer and a first dielectric layer are formed on a substrate. A first patterned metal layer is formed to construct a gate electrode and a capacitor electrode. An ion implantation is conducted on the polysilicon layer to form drain and source electrodes. A second dielectric layer and a second patterned metal layer are formed thereon. Sequentially, a third dielectric layer is formed thereon. A plurality of via openings are formed by a patterned photoresist layer, and a third metal layer is formed thereon and filled into the via openings. The patterned photoresist layer and the redundant third metal layer are stripped from the substrate to form via plugs in the via openings. A patterned transparent conductive layer is formed thereon to connect the via plugs.

REFERENCES:
patent: 5279989 (1994-01-01), Kim
patent: 6566172 (2003-05-01), Jackson et al.
patent: 6791631 (2004-09-01), Cheng et al.
patent: 6885030 (2005-04-01), Onozuka et al.
patent: 7279370 (2007-10-01), Lim et al.
patent: 1591137 (2005-03-01), None
patent: 1834790 (2006-09-01), None
English language translation of abstract and pertinent parts of CN 1834790.
English language translation of abstract of CN 1591137.

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