Semiconductor structure integrated under a pad

Details Semiconductor structure integrated under a pad Semiconductor structure integrated under a pad

2007-03-13

2007-03-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S774000, C257S778000

Reexamination Certificate

active

10519860

ABSTRACT:
An integrated semiconductor structure has a substrate, a semiconductor element located on the substrate, a pad metal, metal layers located between the pad metal and the substrate, and insulation layers that separate the metal layers from one another. The pad metal extends over at least—part of the semiconductor element.Below the surface of the pad metal, at least the top two metal layers include two or more adjacent interconnects.

REFERENCES:
patent: 5751065 (1998-05-01), Chittipeddi et al.
patent: 2001/0010408 (2001-08-01), Ker et al.
patent: 2004/0266183 (2004-12-01), Miller et al.
patent: 1 143 513 (2001-10-01), None
International Search Report from corresponding PCT application No. PCT/DE2003/001955.
Preliminary Examination Report from corresponding PCT application No. PCT/DE2003/001955.

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