Semiconductor structure incorporating thin film transistors with

Details Semiconductor structure incorporating thin film transistors with Semiconductor structure incorporating thin film transistors with

1995-09-29

1997-10-07

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257752, 257758, 257759, H01L 2348, H01L 2352, H01L 2940

Patent

active

056751850

ABSTRACT:
An improved field effect transistor (FET) structure is disclosed. It comprises a first insulator layer containing at least one primary level stud extending through the layer; an undoped cap oxide layer disposed over the insulator layer and abutting the upper region of each stud; a primary level thin film transistor (TFT) disposed over the undoped cap oxide layer; and a planarized oxide layer disposed over the TFT. Multiple TFT's can be stacked vertically, and connected to other levels of studs and metal interconnection layers. Another embodiment of the invention includes the use of a protective interfacial cap over the surface of tungsten-type studs. The FET structure can serve as a component of a static random access memory (SRAM) cell. Related processes are also disclosed.

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patent: 5485035 (1996-01-01), Lin et al.

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