Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1995-02-23
1999-03-30
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257565, H01L 2900
Patent
active
058893156
ABSTRACT:
Integrated circuits suitable for high-performance applications, especially mixed signal products that have analog and digital sections, are fabricatable from a semiconductor structure having two levels of buried regions. In a typical embodiment lower buried regions of opposite conductivity types are situated along a lower semiconductor interface between a semiconductive substrate and an overlying lower semiconductive layer. Upper buried regions of opposite conductivity type are similarly situated along an upper semiconductor interface between the lower semiconductive layer and an overlying upper semiconductive layer. The upper semiconductive layer contains P-type and N-type device regions in which transistor zones are situated. The semiconductor structure is normally configured so that at least one of each of the P-type and N-type device regions is electrically isolated from the substrate. Complementary bipolar transistors can be integrated with complementary field-effect transistors in the structure.
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Brehmer Kevin E.
Cacharelis Philip J.
Farrenkopf Douglas R.
Gadepally Kamesh
Merrill Richard B.
Meetin Ronald J.
National Semiconductor Corporation
Prenty Mark V.
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