Semiconductor structure having recess with conductive metal

Details Semiconductor structure having recess with conductive metal Semiconductor structure having recess with conductive metal

2000-07-06

2008-11-25

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S751000, C257S752000, C257S762000

Reexamination Certificate

active

07456501

ABSTRACT:
A semiconductor structure includes a semiconductor substrate, a recess located in at least one major surface of the substrate, an electrical insulating layer located over the at least one major surface and in the recess, a conductive barrier located over the insulating layer and in the recess and over the at least one major surface, a plating seed layer located over the conductive barrier within the recess only, and a conductive metal in the recess only.

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