Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1995-01-17
1996-04-23
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257410, 257254, 257750, 257276, 257758, 73754, 73724, 73777, H01L 2900
Patent
active
055106455
ABSTRACT:
A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many other microstructures or microdevices. The air regions (20a, 20b, 28a, and 48) are formed by either selectively removing a sacrificial spacer (16a and 16b) or by selectively removing a sacrificial layer (28, 40). The air regions (20a, 20b, 28a, and 48) are sealed, enclosed, or isolated by either a selective growth process or by a non-conformal deposition technique. The air regions (20a, 20b, 28a, and 48) may be formed under any pressure, gas concentration, or processing condition (i.e. temperature, etc.). The air regions (20a, 20b, 28a, and 48) may be formed at any level within an integrated circuit.
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Ajuria Sergio A.
Fitch Jon T.
Gelatos Jerry
Maniar Papu
Moazzami Reza
Guay John
Jackson, Jr. Jerome
Motorola Inc.
Witek Keith E.
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