Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-06-07
2005-06-07
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S094000, C257S103000, C257S190000, C257S194000
Reexamination Certificate
active
06903385
ABSTRACT:
A semiconductor structure having a textured nitride-based layer. The textured nitride-based layer can be formed above one or more crystalline nitride layers and a substrate, and can be formed into any desired pattern. The semiconductor structure can be incorporated as part of, for example, a field effect transistor, a light emitting diode, or a laser.
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Gaska Remigijus
Hu Xuhong
Shur Michael
Flynn Nathan J.
Forde Remmon R.
Hoffman Warnick & D'Alessandro LLC
LaBatt John W.
Sensor Electronic Technology, Inc.
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