Semiconductor structure having a conductive channel

Details Semiconductor structure having a conductive channel Semiconductor structure having a conductive channel

1988-12-20

1991-02-26

Hille, Rolf

357 30, H01L 2980

Patent

active

049965700

ABSTRACT:
The invention relates to an electric element, whose conductance is quantized in units 2e.sup.2 /h realized in a multi-dimensional charge carrier gas, which is provided with a part of reduced width having a width of the order of the Fermi wavelength and a length smaller than the average free path length. Due to the small width of the part of reduced width, the energy levels are subdivided, as a result of which, at a temperature at which the distance between the levels is comparable with kT, the charge transport through the constriction is determined by quantum-mechanical effects. For the charge carrier gas, for example, a two-dimensional electron gas near a GaAs-AlGaAs hetero-junction may be used, for example, in a voltage divider.

REFERENCES:
patent: 4112455 (1978-09-01), Seliger et al.
patent: 4677457 (1987-06-01), Wolter
patent: 4739385 (1988-04-01), Bethea et al.
patent: 4740823 (1988-04-01), Thompson

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