Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-10-10
2006-10-10
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S017000, C257S019000
Reexamination Certificate
active
07119358
ABSTRACT:
The invention relates to a semiconductor structure for use in the near infrared region, preferably in the range from 1.3 to 1.6 μm, said structure comprising an active zone consisting of a plurality of epitaxially grown alternating layers of Si and Ge, a base layer of a first conductivity type disposed on one side of said active zone, and a cladding layer of the opposite conductivity type to the base layer, the cladding layer being provided on the opposite side of said active zone from said base layer, wherein the alternating Si and Ge layers of said active zone form a superlattice so that holes are located in quantized energy levels associated with a valance band and electrons are localized in a miniband associated with the conduction band and resulting from the superlattice structure. The invention is also directed to a method of manufacturing aforementioned structure.
REFERENCES:
patent: 4679061 (1987-07-01), Capasso et al.
patent: 4959694 (1990-09-01), Gell
patent: 5198682 (1993-03-01), Wu et al.
patent: 5399880 (1995-03-01), Chand
patent: 5917195 (1999-06-01), Brown
patent: 6154475 (2000-11-01), Soref et al.
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6621841 (2003-09-01), Soref et al.
patent: 102 07 952 (2003-09-01), None
patent: 1 178 522 (2002-02-01), None
Schmidt, et al., Resonant Tunneling Diodes Made Up of Stacked Self-Assembled GE/SI Islands, Applied Physics Letters, American Institute of Physics, vol. 77, No. 26, pp. 4341-4343, Dec. 25, 2000.
Liu, et al., Observation of Inter-Sub-Level Transitions in Modulation-Doped GE Quantum Dots, Applied Physics Letters, American Institute of Physics, vol. 75, No. 12, pp. 1745-1747, Sep. 20, 1999.
Deutschmann, et al., Miniband Transport in Vertical Superlattice Field-Effect Transistors, Applied Physics Letters, American Institute of Physics, vol. 79, No. 10, pp. 1564-1566, Sep. 3, 2001.
Brunner, et al., GE Quantum Dots in SI: Self-Assembly, Stacking and Level Spectroscopy, Physica E 13, pp. 1018-1021, 2002.
Goryll, et al., Morphology and Photoluminescence of GE Islands Grown on SI (001), Thin Solid films 336, Elsemvier Science S.A., pp. 244-247, 1998.
Schmidt, et al., Effect of Overgrowth Temperature on the Photoluminescence of GE/SI Islands, Applied Physics Letters, American Institute of Physics, vol. 77, No. 16, pp. 2509-2511, Oct. 16, 2000.
Eberl, et al., Self-Assembling SIGE and SIGEC Nanostructures for Light Emitters and Tunneling Diodes, Thin Solid Films 369, Elsevier Science S.A., pp. 33-38, 2000.
Scamarcio, et al., Tunable Interminiband Infrared Emission in Superlattice Electron Transport, Applied Physics Letters, American Institute of Physics, pp. 1796-1798, Apr. 7, 1997.
O.G. Schmidt, et al.,Multiple Layers of Self-Assembled GE/SI Islands: Photoluminescence, Strain Fields, Material Interdiffusion, and Island Formation, Physical Review B, The American Physical Society, vol. 61, No. 20, pp. 13721-13729, May 15, 2000.
Manfred Helm, Topical Review, Infrared Spectroscopy and Transport of Electrons in Semiconductor Superlattices, Semiconductor Science Technology 10, pp. 557-575, 1995.
European Search Report, Jul. 14, 2003.
Peter Schittenhelm, “Selected Topics of Semiconductor Physics and Technology”, vol. 2, Eds: G. Abstreiter, M. Stutzmann, P. Vogl, Jun. 1997, Two-Page English Summary (ISBN: 3-932749-02-2).
L. Colace et al., “Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates”,Applied Physics Letters, pp. 1231-1233, Mar. 6, 2000.
A.G. Cullis et al., “The structural and luminescence propereties of porous silicon”,Applied Physics Reviews, pp. 909-965 Aug. 1, 1997.
H. Presting et al., “Room-temperature electroluminescence from Si/Ge/Si1−xGexquantum-well diodes grown by molecular-beam epitaxy”,Applied Physics Letters, pp. 2376-2378, Oct. 14, 1996.
T. Brunhes et al., “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition”,Applied Physics Letters, pp. 1822-1824, Sep. 18, 2000.
E. Eberl et al., “Pseudomorphic Si1−yCyand Si1−x−yGexCyalloy layers on Si”,Thin Solid Films, pp. 98-104, 1997.
O.G. Schmidt et al., “Multiple layers of self-assembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation”,Physical Review B, pp. 721-729, May 15, 2000.
M. Goryll et al, “Morphology and photoluminescence of Ge islands grown on Si(001)”,Thin Solid Films, pp. 244-247, 1998.
H. Sunamura et al., “Photoluminescence investigation on growth mode changeover of Ge on Si(100)”,Journal of Crystal Growth, pp. 265-269, 1995.
O.G. Schmidt et al., “Effect of overgrowth temperature on the photoluminescence of Ge/Si islands”,Applied Physics Letters, pp. 2509-2511, Oct. 16, 2000.
Y.Q. Wang et al., “High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride,”Applied Physics Letters, pp. 3474-3476, Oct. 27, 2003.
P. Werner et al., “Interface structure and Schottky barrier height of buried CoSi2/Si(001) layers,”J. Applied Physics, pp. 3846-3854, Sep. 15, 1993.
Cirlin George
Egorov Viatcheslav
Talalaev Vadim
Werner Peter
Zakharov Nikolai
Crane Sara
Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
Sierra Patent Group Ltd.
LandOfFree
Semiconductor structure for use in the near infrared region... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor structure for use in the near infrared region..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure for use in the near infrared region... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3653827