Semiconductor structure for use in a static induction...

Details Semiconductor structure for use in a static induction... Semiconductor structure for use in a static induction...

2008-05-13

2008-05-13

Rose, Kiesha L. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S077000, C257SE29243, C438S192000, C438S931000

Reexamination Certificate

active

07372087

ABSTRACT:
A structure for use in a static induction transistor includes a semiconductor body having first and second semiconductor layers on a substrate, with the second layer having a dopant concentration of around an order of magnitude higher than the dopant concentration of the first layer. A plurality of sources are located on the second layer. A plurality of gates are ion implanted in the second layer, an end one of the gates being connected to all of the plurality of gates and constituting a gate bus. The gate bus has an extension connecting the gate bus in the second layer of higher dopant concentration to the first layer of lower dopant concentration. The extension is ion implanted in either a series of steps or a sloping surface which is formed in the first and second layers.

REFERENCES:
patent: 5967795 (1999-10-01), Bakowsky et al.
patent: 6693308 (2004-02-01), Sankin et al.

Affiliated with

Also associated with

Rating

Semiconductor structure for use in a static induction... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure for use in a static induction..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure for use in a static induction... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2813156