Semiconductor structure for thermal shutdown protection

Details Semiconductor structure for thermal shutdown protection Semiconductor structure for thermal shutdown protection

1997-03-18

2000-01-11

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257290, 257293, 257444, 257458, 257226, 257359, 257406, 257470, 257380, H02H 902

Patent

active

06013934&

ABSTRACT:
A semiconductor structure having a temperature sensor placed in close proximity to gate and source and/or drain electrodes. The sensor is compatible with conventional semiconductor processing and is typically made from doped polysilicon having a large temperature coefficient of resistivity. At least one sensor may be placed under, but insulated from, source or drain electrodes to protect against high electric fields. The sensor is also compatible with bipolar semiconductor structures.

REFERENCES:
patent: 5025298 (1991-06-01), Fay et al.
patent: 5027251 (1991-06-01), Hirota et al.
patent: 5087956 (1992-02-01), Ikeda et al.
patent: 5502338 (1996-03-01), Suda et al.
patent: 5594269 (1997-01-01), Spinner, III et al.
patent: 5726481 (1998-03-01), Moody

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