Semiconductor structure for photodetector

Details Semiconductor structure for photodetector Semiconductor structure for photodetector

1991-11-05

1993-05-25

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

257431, H01J 4014

Patent

active

052142760

ABSTRACT:
A photodiode comprises e.g. an n-type semiconductor layer, a p-type semiconductor region selectively formed in a central part from a surface of the n-type semiconductor layer, a dish-like shaped pn-junction therebetween, an annular electrode formed on the p-type region, an electrode formed on the other side of the n-type semiconductor layer, and a dielectric layer deposited on the n-type semiconductor layer for preventing light from attaining to the semiconductor layer by reflecting a dielectric multilayer consisting of two different media having effective thicknesses equal to one fourth of the wavelength of the light.

REFERENCES:
patent: 3579130 (1971-05-01), Smiley
patent: 3969751 (1976-07-01), Drukaroff et al.
patent: 4727407 (1988-02-01), Nobue et al.
patent: 4916305 (1990-04-01), Antell

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