Semiconductor structure for optoelectronic components with inclu

Details Semiconductor structure for optoelectronic components with inclu Semiconductor structure for optoelectronic components with inclu

1991-01-10

1991-12-24

Mintel, William

Coherent light generators

Particular component circuitry

Optical pumping

372 48, 372 43, 372 45, 357 16, H01L 3300

Patent

active

050757423

ABSTRACT:
The object of the invention is to reduce the influence of dislocations on the functioning of structures for optoelectronic component, such as laser, made from semiconductor materials. Accordingly, one of the lasers of such a structure comprises three-dimensional inclusions in a semiconductor material with a thinner forbidden band than the forbidden band of the layer material. The inclusions are e.g. distributed over several planes of the active layer of a laser, and may be in InAs introduced into a layer in GaAs.

REFERENCES:
patent: 4751194 (1988-06-01), Cibert et al.
patent: 4786951 (1988-11-01), Tokuda et al.
patent: 4802181 (1989-01-01), Iwata
Marinace et al., "Ge Inlays in a GaAs Matrix by Solvent Evaporation," IBM Technical Disclosure Bulletin, vol. 6, No. 2, Jul. 1963, p. 81.

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