Patent
1984-08-02
1986-08-12
James, Andrew J.
357 20, 357 13, 357 52, H01L 2972, H01L 2906, H01L 2990, H01L 2934
Patent
active
046059482
ABSTRACT:
A semiconductor device structure incorporates a semiconductor wafer having first and second opposing major surfaces and an edge. A first region of first conductivity type is contiguous with the second surface and includes an edge portion which is contiguous with the wafer edge at the first surface. A second region, of second conductivity type, extends into the wafer from the first surface so as to form a PN junction with the first region at a predetermined depth from the first surface. A third region, of second conductivity type, extends into the wafer from the first surface to a depth greater than the predetermined depth. The third region is disposed between and is contiguous with the second region and the edge portion of the first region. When the wafer is silicon the third region has an areal charge concentration of approximately 1 to 2.times.10.sup.12 cm.sup.-2.
REFERENCES:
patent: 3921199 (1975-11-01), Yuan et al.
patent: 3971061 (1976-07-01), Matsushita et al.
High Voltage Thin Layer Devices (Resurf Devices), J. A. Appels et al., IEDM Technical Digest, 1979, pp. 238-241.
Physics and Technology of Semiconductor Devices, A. S. Grove, John Wiley and Sons, Inc., New York, 1967, pp. 191-193.
Cohen Donald S.
Glick Kenneth R.
Henn Terri M.
James Andrew J.
Morris Birgit E.
LandOfFree
Semiconductor structure for electric field distribution does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor structure for electric field distribution, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure for electric field distribution will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1947292