Semiconductor structure for driver circuits with level shifting

Details Semiconductor structure for driver circuits with level shifting Semiconductor structure for driver circuits with level shifting

1999-08-02

2000-08-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257368, 257394, 257504, H01L 2900, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

060970758

ABSTRACT:
An arrangement (100) has a low voltage circuit (196') on a first doped well (110) and a high voltage circuit (197') on a second doped well (120) integrated into a common semiconductor substrate (105). The first well (110) laterally extends along a surface (106) of the substrate (105) to provide a voltage drop (.vertline.V.sub.LARGE .vertline.) between a first end (111) and a second end (112) so that potential differences between the circuits (196', 197') are substantially isolated. The low voltage circuit (196') controls a current from the second end (112) to provide a variable potential (by .vertline.V.sub.SMALL .vertline.) at the second end (112) which is communicated to other parts (193') of the second circuit (197') by a connection (150). The wells (110, 120) are spaced to provide isolation for potential magnitude changes between the second end (112) of the first well (110) and the second well (120) which are invoked by the first circuit (196').

REFERENCES:
patent: 4239558 (1980-12-01), Morishita et al.
patent: 4879584 (1989-11-01), Takagi et al.
patent: 4907041 (1990-03-01), Huang
patent: 5060047 (1991-10-01), Jaume et al.
patent: 5475335 (1995-12-01), Merrill et al.
patent: 5500551 (1996-03-01), Puzzolo et al.
patent: 5502412 (1996-03-01), Choi et al.
patent: 5550701 (1996-08-01), Nadd et al.
patent: 5640034 (1997-06-01), Malhi
patent: 5686754 (1997-11-01), Choi et al.
patent: 5828108 (1998-10-01), Toyoda

Affiliated with

Also associated with

Rating

Semiconductor structure for driver circuits with level shifting does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure for driver circuits with level shifting, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure for driver circuits with level shifting will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-666677