Semiconductor structure for a transistor

Details Semiconductor structure for a transistor Semiconductor structure for a transistor

1996-09-06

1999-11-16

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257198, 257590, H01L 310312, H01L 310328, H01L 310336, H01L 31072

Patent

active

059862874

ABSTRACT:
Semiconductor structure for a transistor, having at least one doped crystalline semiconductor layer (3) consisting of a semiconductor material such as silicon or germanium which is applied onto a further crystalline layer, wherein the doped semiconductor layer (3) contains carbon alloyed with this semiconductor material to improve the conduction characteristics, and wherein a desired strain can be set in the active semiconductor layer (3) via the proportion of carbon relation to the semiconductor material.

REFERENCES:
patent: 5536952 (1996-07-01), Shikata
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