Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2003-03-19
2009-11-10
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S263000, C257S265000, C257S287000, C257SE21375, C438S193000, C438S194000
Reexamination Certificate
active
07615802
ABSTRACT:
The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a base doping. The current (I) in the channel region (22) can be influenced by means of at least one depletion zone (23, 24). The channel region (22) contains an n-conductive channel region (225) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region (225) is produced by ionic implantation in an epitaxial layer (262) that surrounds the channel region (22).
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Elpelt Rudolf
Mitlehner Heinz
Schörner Reinhold
Greenberg Laurence A.
Locher Ralph E.
Pert Evan
SiCED Electronics Development GmbH & Co. KG
Stemer Werner H.
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