Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2011-07-05
2011-07-05
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S014000, C257S094000, C257S096000, C257SE33012, C438S022000, C438S046000
Reexamination Certificate
active
07973326
ABSTRACT:
The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide a first site for the growth of a plurality of first epitaxial crystals of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide a third site for the growth of a third epitaxial crystal of the semiconductor material toward the first preferred orientation.
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“Office Action of Taiwan Counterpart Application”, issued on Feb. 24, 2011, p. 1-p. 5, in which the listed references were cited.
Cheng Chih-Ching
Tsai Tzong-Liang
Huga Optotech Inc.
Jianq Chyun IP Office
Nguyen Thinh T
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