Semiconductor structure and semiconductor laser device

Details Semiconductor structure and semiconductor laser device Semiconductor structure and semiconductor laser device

1990-06-27

1991-12-17

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 4, 357 17, H01S 319

Patent

active

050738933

ABSTRACT:
A semiconductor structure has a substrate crystal having a plurality of crystal orientations. Above the substrate is an atomic-layer superlattice in which different semiconductors are laminated one over another with a period in terms of atomic layers. This structure makes it possible to realize a semiconductor structure in which several kinds of quantum wires or quantum boxes having different physical properties, or an atomic-layer superlattice having an enlarged structure of the quantum wire or quantum box, are arranged in the plane orientation of the same substrate. In addition, the structure makes it possible to realize a semiconductor laser device having this structure.

REFERENCES:
patent: 4785457 (1988-11-01), Asbeck et al.
patent: 4805179 (1989-02-01), Harder et al.
Bell Communications Research, Navesink Research and Engineering Center, 331 Newman Springs Road, Red Bank, N.J. 07701, Patterned Quantum Well Semiconductor Injection Lasers, E. Kapon, C. P. Yun, D. M. Hwang, J. P. Harbison, R. Bhat and N. G. Stoffel, 7/18/88.

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