Semiconductor structure and method of manufacture

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...

Reexamination Certificate

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Reexamination Certificate

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07598588

ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor device includes a plurality of rectilinear structures, wherein the plurality of rectilinear structures comprise silicon dioxide and extend from a surface of a semiconductor material to a distance of at least about three microns or greater below the surface of the semiconductor material and wherein a first rectilinear structure of the plurality of rectilinear structures is perpendicular to, or substantially perpendicular to, a second rectilinear structure of the plurality of rectilinear structures. Other embodiments are described and claimed.

REFERENCES:
patent: 6593621 (2003-07-01), Tsuchiko et al.
patent: 6909114 (2005-06-01), Yamazaki
patent: 6959127 (2005-10-01), Zoorob
patent: 2007/0020956 (2007-01-01), Kamata et al.

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