Semiconductor structure and method of manufacture

Details Semiconductor structure and method of manufacture Semiconductor structure and method of manufacture

2011-08-16

2011-08-16

Estrada, Michelle (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S435000, C257SE21540, C257SE21545, C257SE21564

Reexamination Certificate

active

07998829

ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an electrochemical etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.

REFERENCES:
patent: 2009/0017593 (2009-01-01), Wu et al.
patent: 2009/0017594 (2009-01-01), Sumino et al.
patent: 2009/0029523 (2009-01-01), Seo et al.
patent: 2010/0044858 (2010-02-01), Cohn et al.
patent: 2010/0059849 (2010-03-01), Quddus

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