Semiconductor structure and method of manufacture

Details Semiconductor structure and method of manufacture Semiconductor structure and method of manufacture

2010-07-09

2011-11-01

Mandala, Victor A (Department: 2826)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S421000, C438S411000, C438S433000, C438S434000, C257S506000, C257S510000, C257S522000, C257S634000, C257SE29020, C257SE21573, C257SE21581

Reexamination Certificate

active

08048760

ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.

REFERENCES:
patent: 4656497 (1987-04-01), Rogers et al.
patent: 6121149 (2000-09-01), Lukanc et al.
patent: 6274920 (2001-08-01), Park et al.
patent: 6518171 (2003-02-01), Towle
patent: 7001854 (2006-02-01), Papasouliotis et al.
patent: 2002/0052092 (2002-05-01), Lachner
patent: 2006/0258037 (2006-11-01), Fischer et al.
patent: 2008/0293214 (2008-11-01), Williams et al.
patent: 2009/0146248 (2009-06-01), Gogoi et al.
patent: 2007273993 (2007-10-01), None
patent: 2009/076509 (2009-06-01), None
patent: 2009/076509 (2009-06-01), None
International Search Report and Written Opinion received for PCT Patent Application No. PCT/US2008/086383, mailed on Jul. 27, 2009, 11 Pages.
International Preliminary Report on Patentability received for PCT Patent Application No. PCT/US2008/086383, mailed on Jun. 24, 2010, 6 Pages.
Restriction Requirement received for U.S. Appl. No. 12/329,914, mailed on Mar. 10, 2010, 4 Pages.
Notice of Allowance Received for U.S. Appl. No. 12/329,914 , mailed on Jun. 29, 2010, 9 Pages.

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