Semiconductor structure and fabrication method thereof

Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage

Reexamination Certificate

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C257S335000, C257S339000, C257S409000, C257S484000

Reexamination Certificate

active

07838343

ABSTRACT:
A semiconductor fabrication process according to the present invention defines an auxiliary structure with a plurality of spaces with a predetermined line-width in the oxide layer to prevent the conductive material in the spaces from being removed by etching or defined an auxiliary structure to rise the conductive structure so as to have the conductive structure being exposed by chemical mechanical polishing. Thus, the transmitting circuit can be defined without requiring an additional mask. Hence, the semiconductor fabrication process can reduce the number of required masks to lower the cost.

REFERENCES:
patent: 7605432 (2009-10-01), Williams et al.
patent: 2007/0001240 (2007-01-01), Mallikarjunaswamy et al.
patent: 2009/0020812 (2009-01-01), Cheng

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