Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage
Reexamination Certificate
2009-03-13
2010-11-23
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having structure increasing breakdown voltage
C257S335000, C257S339000, C257S409000, C257S484000
Reexamination Certificate
active
07838343
ABSTRACT:
A semiconductor fabrication process according to the present invention defines an auxiliary structure with a plurality of spaces with a predetermined line-width in the oxide layer to prevent the conductive material in the spaces from being removed by etching or defined an auxiliary structure to rise the conductive structure so as to have the conductive structure being exposed by chemical mechanical polishing. Thus, the transmitting circuit can be defined without requiring an additional mask. Hence, the semiconductor fabrication process can reduce the number of required masks to lower the cost.
REFERENCES:
patent: 7605432 (2009-10-01), Williams et al.
patent: 2007/0001240 (2007-01-01), Mallikarjunaswamy et al.
patent: 2009/0020812 (2009-01-01), Cheng
Tu Kao-Way
Tung Cheng-Hui
Fernandes Errol
Niko Semiconductor Co., Ltd.
Pham Thanh V
Schmeiser Olsen & Watts LLP
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