Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2007-07-31
2007-07-31
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S644000, C257S650000, C257S762000, C257SE23194, C438S113000, C438S114000, C438S458000, C438S462000
Reexamination Certificate
active
11162863
ABSTRACT:
A semiconductor structure is provided. The semiconductor structure is disposed on the scribe line of a wafer and is around the chip area of the wafer. The semiconductor structure includes a plurality of dielectric layers sequentially disposed on the scribe line and a plurality of metal patterns disposed in each dielectric layer. The metal patterns disposed in each dielectric layer extend to the next underlying dielectric layer.
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Jao Jui-Meng
Kuo Chien-Li
Wu Bing-Chang
Jianq Chyun IP Office
Rodela Eduardo A.
Tran Minhloan
United Microelectronics Corp.
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