Semiconductor structure and devices

Details Semiconductor structure and devices Semiconductor structure and devices

1985-03-11

1987-09-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 372 48, H01S 319

Patent

active

046913203

ABSTRACT:
Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

REFERENCES:
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3982207 (1976-09-01), Dingle et al.
patent: 4257011 (1981-03-01), Nakamura et al.
patent: 4280106 (1981-07-01), Scifres et al.
patent: 4317085 (1982-02-01), Burnham et al.
patent: 4326176 (1982-04-01), Aiki et al.
patent: 4416011 (1983-11-01), Olsen
patent: 4434491 (1984-02-01), Sakuma et al.
G. Olsen et al., Journal of Applied Physics, vol. 45, 5112 (1974).

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