Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-07-10
2007-07-10
Le, Dung A (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S511000, C257S506000, C257SE21371
Reexamination Certificate
active
11382720
ABSTRACT:
A structure comprises a deep sub-collector buried in a first epitaxial layer and a near sub-collector buried in a second epitaxial layer. The structure further comprises a deep trench isolation structure isolating a region which is substantially above the deep sub-collector, a reach-through structure in contact with the near sub-collector, and a reach-through structure in contact with the deep sub-collector to provide a low-resistance shunt, which prevents COMS latch-up of a device. The method includes forming a merged triple well double epitaxy/double sub-collector structure.
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Liu Xuefeng
Rassel Robert M.
Voldman Steven H.
Canale Anthony J.
Greenblum & Bernstein P.L.C.
International Business Machine Corporation
Le Dung A
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