Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-12-09
2011-11-01
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S347000, C257SE29020
Reexamination Certificate
active
08049297
ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to form a cavity that extends at least about one micron or greater below the surface of the semiconductor material, filling the cavity with a sacrificial material, forming a dielectric material over the sacrificial material and over at least a portion of the surface of the semiconductor material, and removing a portion of the dielectric material to form an opening to expose a portion of the sacrificial material, wherein the opening has a width that is substantially less than a width of the cavity and the dielectric material is rigid or substantially rigid. The method further includes removing the sacrificial material. Other embodiments are described and claimed.
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Cool Kenneth J.
Cool Patent P.C.
HVVi Semiconductors, Inc.
Jefferson Quovaunda V
Smith Matthew
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