Semiconductor structure

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C257S347000, C257SE29020

Reexamination Certificate

active

08049297

ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to form a cavity that extends at least about one micron or greater below the surface of the semiconductor material, filling the cavity with a sacrificial material, forming a dielectric material over the sacrificial material and over at least a portion of the surface of the semiconductor material, and removing a portion of the dielectric material to form an opening to expose a portion of the sacrificial material, wherein the opening has a width that is substantially less than a width of the cavity and the dielectric material is rigid or substantially rigid. The method further includes removing the sacrificial material. Other embodiments are described and claimed.

REFERENCES:
patent: 5480832 (1996-01-01), Miura et al.
patent: 6046476 (2000-04-01), Morishita et al.
patent: 6136682 (2000-10-01), Hegde et al.
patent: 6287908 (2001-09-01), Brand
patent: 6326306 (2001-12-01), Lin
patent: 6784091 (2004-08-01), Nuetzel et al.
patent: 7180116 (2007-02-01), Chiang et al.
patent: 2005/0032320 (2005-02-01), Yokoyama

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