Semiconductor stress sensor

Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system

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73726, 73720, 7351434, 73DIG4, 257415, 257254, 257 27, G01L 100

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057708037

ABSTRACT:
A semiconductor substrate has a surface layer disposed underneath a gate electrode of a field-effect transistor and having a resistance higher than the resistance of an inner layer which is formed in the semiconductor substrate below the surface layer. The surface layer is formed when a donor doped in the surface layer and an acceptor generated based on a compressive stress which is developed in the surface layer when the gate electrode is formed substantially cancel out each other. The field-effect transistor operates alternatively as a junction field-effect transistor when the surface layer is turned into a p-type structure when a compressive stress is generated in the surface layer and a metal semiconductor field-effect transistor when the surface layer is turned into an n-type structure when a tensile stress is generated in the surface layer.

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"Microelectronic Circuits-Second Edition" by A.S. Sedra, K.C. Smith, Copyright 1987, Chapter 6, pp. 261-263.

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