Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system
Patent
1996-09-04
1998-06-23
Williams, Hezron E.
Measuring and testing
Specimen stress or strain, or testing by stress or strain...
Specified electrical sensor or system
73726, 73720, 7351434, 73DIG4, 257415, 257254, 257 27, G01L 100
Patent
active
057708037
ABSTRACT:
A semiconductor substrate has a surface layer disposed underneath a gate electrode of a field-effect transistor and having a resistance higher than the resistance of an inner layer which is formed in the semiconductor substrate below the surface layer. The surface layer is formed when a donor doped in the surface layer and an acceptor generated based on a compressive stress which is developed in the surface layer when the gate electrode is formed substantially cancel out each other. The field-effect transistor operates alternatively as a junction field-effect transistor when the surface layer is turned into a p-type structure when a compressive stress is generated in the surface layer and a metal semiconductor field-effect transistor when the surface layer is turned into an n-type structure when a tensile stress is generated in the surface layer.
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"Microelectronic Circuits-Second Edition" by A.S. Sedra, K.C. Smith, Copyright 1987, Chapter 6, pp. 261-263.
Honda Giken Kogyo Kabushiki Kaisha
Moller Richard A.
Williams Hezron E.
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