Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-07-08
1994-05-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 18, 257 21, 257186, H01L 2714
Patent
active
053089952
ABSTRACT:
By making the lattice constant of barrier layers of a superlattice avalanche photodiode lower than the lattice constant of well layers to apply a tensile stress to the barrier layers, a high gain-bandwidth product can be obtained with a high ionization rate ratio kept.
REFERENCES:
Gershoni et al., "Strained-Layer Ga.sub.1-x In.sub.x As/In P Avalanche Photodetectors," Appl. Phys. Lett. 53 (14), Oct. 3, 1988, pp. 1294-1296.
Das et al., "Performance Characteristics of InGaAs/GaAs and GAs/InGaAlAs Coherently Strained Superlattice Photodiodes," Appl. Phys. Lett. 51(15), Oct. 12, 1987, pp. 1164-1165.
Kagawa et al. "Superlattice Avalanche Photodiode For High Bit Rate Optical Transmission Systems," Third Optoelectronics Conference (Dec. '90), Technical Digest, Jul. 1990, Makuhari Messe, pp. 194-195.
Capasso et al., "New Avalanche Multiplication Phenomenon in Quantum Well Superlattices: Evidence fo Impact Ionization Across The Band-Edge Discontinuity," Appl. Phys. Lett. 48(19), May 12, 1986, pp. 1294-1296.
"Superlattice Avalance Photodiode for High Bit Rate Optical Transmission Systems", Toshiaki Kagawa and Mitsuru Naganuma, Third Optoelectronics Conference (OEC '90), Technical Digest, Jul. 1990, Makuhari Messe, pp. 194-195.
Nakamura Hitoshi
Tsuji Shinji
Hitachi , Ltd.
Mintel William
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