Semiconductor strain sensor with Wheatstone bridge drive voltage

Details Semiconductor strain sensor with Wheatstone bridge drive voltage Semiconductor strain sensor with Wheatstone bridge drive voltage

1994-06-24

1995-10-24

Chilcot, Richard

Measuring and testing

Specimen stress or strain, or testing by stress or strain...

Specified electrical sensor or system

73708, 73721, G01L 906

Patent

active

054600502

ABSTRACT:
A drive circuit for a strain sensor includes a Wheatstone bridge having semiconductor strain gauges. A temperature-dependent voltage generator generates a voltage having a predetermined ambient temperature dependency characteristic, a constant voltage generator generates a predetermined constant voltage, and a proportional voltage generator generates a voltage proportional to an externally supplied power source voltage. A voltage processor receives and arithmetically processes output voltages of the temperature-dependent voltage generator, the constant voltage generator and the proportional voltage generator to generate a bridge drive voltage which changes from a mid value to a predetermined voltage depending on a temperature proportional to the power source voltage. In an amplifier circuit for amplifying a strain output signal from the Wheatstone bridge, both the potentials across an AC coupling capacitor are kept to be equal at a steady-state operation. Detection sensitivity variations due to the temperature dependency characteristic of the strain gauges can be effectively compensated.

REFERENCES:
patent: 4611163 (1986-09-01), Madeley
patent: 5048343 (1991-09-01), Oboodi et al.
patent: 5146788 (1992-09-01), Raynes
patent: 5253532 (1993-10-01), Kamens

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