Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1993-07-14
1995-04-18
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257418, 257419, 257420, 257417, 73517R, 73720, 73721, H01L 2984
Patent
active
054081122
ABSTRACT:
A semiconductor strain sensor includes a base, a peripheral section, a central section and a flexible beam. The peripheral section is bent to the base. Bonding strain is generated at a bonding portion between the base and the peripheral section. The central section extends from the peripheral section. The flexible beam extends from the central section and includes a strain detecting element. The strain detecting element changes its electric characteristic when strain is applied thereto. A thickness of the flexible beam is thinner than that of the central section. The bonding strain is transmitted from the bonding portion to the strain detecting element through a transmission path. The transmission path is bent. The bonding strain is attenuated because it is dispersed at a bending portion of the transmission path. The sensor accurately detects the strain to be detected without a bad influence of the bonding strain.
REFERENCES:
patent: 4829822 (1989-05-01), Imai et al.
patent: 4963954 (1990-10-01), Halg et al.
patent: 4967597 (1990-11-01), Yamada et al.
patent: 5000817 (1991-03-01), Aine
patent: 5068203 (1991-11-01), Logsdon et al.
patent: 5160693 (1992-11-01), Eckert et al.
Knutti et al., "Advanced Silicon Microstructures," ASICT Conference, 11 Apr. 1989, reprinted by IC Sensors, U.S.A., pp. 1-6.
Henry V. Allen, et al., "Accelerometer Systems with Built-in Testing," Transducers '89, Proceedings of the 5th Int'l Conf. on Solid-State Sensors and Actuators and Eurosensors III, Jun. 25-30, 1989, Monteux, Switzerland.
Stephen Terry, "A Miniature Silicon Accelerometer with Built-in Damping," Paper presented at IEEE Solid-State Sensors & Actuators Workshop on 8 Jun. 1988, Hilton Head, South Carolina.
Fujihashi Yoshinori
Fukada Tsuyoshi
Shioya Hirohito
Sugito Hiroshige
Tai Akira
Mintel William
Nippondenso Co. Ltd.
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