Semiconductor strain measuring apparatus

Electrical resistors – Strain gauge type – Dynamometer type

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338 2, G01L 122

Patent

active

046546219

ABSTRACT:
Semiconductor strain measuring apparatus for producing electrical output signals indicative of physical strains, in which a single crystal silicon substrate has the impurity concentration within the range between 1.times.10.sup.16 cm.sup.-3 and 2.times.10.sup.19 cm.sup.-3, thereby inhibiting the increase in the reverse leakage current flowing from the strain gauge through the substrate at high temperatures and thus enabling exact measurements even at high temperatures above 180.degree. C.

REFERENCES:
patent: 4080830 (1978-03-01), Eckstein et al.
patent: 4463336 (1984-07-01), Black et al.
patent: 4510671 (1985-04-01), Kurtz et al.

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